1. 毕业设计（论文）的内容和要求
本课题将通过机械剥离方法制备二维半导体InSe，通过对剥离过程不同条件的摸索，如剥离次数，剥离时加热温度等，得到大面积，少层数的二维半导体InSe，最好是得到若干单层二维半导体InSe。
了解自旋注入原理，怎么制备自旋注入器件，自旋注入到InSe材料中的意义是什么。
最后把整个研究内容写成毕业论文。
2. 参考文献
1. Ohno Y, Young D K, Beschoten B, et al. Electrical spin injection in a ferromagnetic semiconductor heterostructure[J]. Nature, 1999, 402(6763): 790-792.2. Zhu H J, Ramsteiner M, Kostial H, et al. Room-temperature spin injection from Fe into GaAs[J]. Physical Review Letters, 2001, 87(1): 016601.3. Cheuk L W, Sommer A T, Hadzibabic Z, et al. Spin-injection spectroscopy of a spin-orbit coupled Fermi gas[J]. Physical Review Letters, 2012, 109(9): 095302.4. Jonker B T, Park Y D, Bennett B R, et al. Robust electrical spin injection into a semiconductor heterostructure[J]. Physical Review B, 2000, 62(12): 8180.5. Schmidt G, Ferrand D, Molenkamp L W, et al. Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor[J]. Physical Review B, 2000, 62(8): R4790.6. Jedema F J, Filip A T, Van Wees B J. Electrical spin injection and accumulation at room temperature in an all-metal mesoscopic spin valve[J]. Nature, 2001, 410(6826): 345-348.7. Johnson M, Silsbee R H. Spin-injection experiment[J]. Physical Review B, 1988, 37(10): 5326.8. Takahashi S, Maekawa S. Spin injection and detection in magnetic nanostructures[J]. Physical Review B, 2003, 67(5): 052409.9. Han W, Pi K, McCreary K M, et al. Tunneling spin injection into single layer graphene[J]. Physical review letters, 2010, 105(16): 167202.10. Hammar P R, Bennett B R, Yang M J, et al. Observation of spin injection at a ferromagnet-semiconductor interface[J]. Physical Review Letters, 1999, 83(1): 203.11. Hammar P R, Bennett B R, Yang M J, et al. Observation of spin injection at a ferromagnet-semiconductor interface[J]. Physical Review Letters, 1999, 83(1): 203.12. Hanbicki A T, Jonker B T, Itskos G, et al. Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor[J]. Applied Physics Letters, 2002, 80(7): 1240-1242.13. Motsnyi V F, De Boeck J, Das J, et al. Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure[J]. Applied Physics Letters, 2002, 81(2): 265-267.14. Smith D L, Silver R N. Electrical spin injection into semiconductors[J]. Physical review B, 2001, 64(4): 045323.15. Yu Z G, Flatt M E. Electric-field dependent spin diffusion and spin injection into semiconductors[J]. Physical Review B, 2002, 66(20): 201202.16. Barraud C, Seneor P, Mattana R, et al. Unravelling the role of the interface for spin injection into organic semiconductors[J]. Nature Physics, 2010, 6(8): 615-620.17. Shiomi Y, Nomura K, Kajiwara Y, et al. Spin-electricity conversion induced by spin injection into topological insulators[J]. Physical review letters, 2014, 113(19): 196601.18. Wimmer M, Adagideli I, Berber S, et al. Spin currents in rough graphene nanoribbons: Universal fluctuations and spin injection[J]. Physical review letters, 2008, 100(17): 177207.19. Ohishi M, Shiraishi M, Nouchi R, et al. Spin injection into a graphene thin film at room temperature[J]. Japanese Journal of Applied Physics, 2007, 46(7L): L605.20. Hanbicki A T, Vant Erve O M J, Magno R, et al. Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier[J]. Applied Physics Letters, 2003, 82(23): 4092-4094.
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