1. 毕业设计（论文）的内容和要求
MoS2作为一种典型的二维半导体材料，近些年来受到了广泛的关注和研究，尤其在场效应管、光电子器件、传感器等领域。
虽然单层MoS2的制备技术很多，如：机械剥离法、CVD、ALD等，但这些方法在制备面积、成品率、结晶质量的方面各有其局限性而使得材料及器件的发展受到了限制。
本课题拟基于MoS2单晶毛坯料，结合上述方法的优点，创新开发出一种大面积单层MoS2的制备技术，为其电子和光电子器件的制备提供参考。
2. 参考文献
1. Lei Yang，et al, et al, Large-area synthesis of monolayered MoS2(1x)Se2x with a tunable band gap and its enhanced electrochemical catalytic activity, Nanoscale, 2015,7, 10490-10497.2. Chen B , Yu Q , Yang Q , et al. Large-area high quality MoS2 monolayers grown by sulfur vapor counter flow diffusion[J]. RSC Adv. 2016:10.1039.C6RA03641D.3. Jaeho Jeon, et al, Layer-controlled CVD growth of large-area two-dimensional MoS2 films, Nanoscale, 2015,7, 1688-1695.4. 黄亚洲,刘磊,沙菁,等.原子层沉积二硫化钼薄膜的机理及所生长薄膜的质量[J].东南大学学报(自然科学版),2017,47(5):933-937. DOI:10.3969/j.issn.1001-0505.2017.05.015.5. Masihhur R L, Ma L, Kannappan S, et al. Large area single crystal(0001)oriented MoS2 [J]. Applied Physics Letters, 2013, 102: 252108. DOI: 10.1063/1.4811410.6. Li B, Yang S X, Huo N J, et al. Growth of large area few-layer or monolayer MoS2 from controllable MoO3 nanowire nuclei [J]. RSC Advances,2014, 4: 26407-26412. DOI: 10.1039/c4ra01632g.7. Patil S, Harle A, Sathaye S, et al. Development of a novel method to grow mono-/few-layered MoS2 films and MoS2-graphene hybrid films for supercapacitor applications [J]. Cryst Eng Comm, 2014, 16: 10845-10855. DOI: 10.1039/c4ce01595a.8.Zhan Y J, Liu Z, Najmaei S, et al. Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate [J]. Small, 2012, 8: 966-971. DOI: 10.1002/smll.201102654.9. Wang X, Feng H, Wu Y, et al. Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition [J]. Journal of the American Chemical Society, 2013, 135(14): 5304-5307. DOI: 10.1021/ja4013485.10. Ott A W, Mccarley K C, Klaus J W, et al. Atomic layer controlled deposition of Al2O3 films using binary reaction sequence chemistry [J]. Applied Surface Science,1996, 107: 128-136. DOI: 10.1016/S0169-4332(96)00503-X.
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