1. 毕业设计（论文）的内容和要求
利用八带kp法对InAs/GaAs量子点能带结构和载流子动力学特性进行研究，改变量子点垒层高度、间距等尺寸参数，研究其对跃迁能量、跃迁几率等性能参数的影响。
2. 参考文献
[1]Utrilla A D ,Grossi D F ,Reyes D F , et al. Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate[J]. Applied Surface Science, 2018, 444.[2]Han I S ,Kim S H ,Kim J S , et al. Correction to: Electrical and optical characterizations of InAs/GaAs quantum dot solar cells[J]. Applied Physics A, 2018, 124(3):245.[3]Cedola A ,Cappelluti F ,Gioannini M . Dependence of quantum dot photocurrent on the carrier escape nature in InAs/GaAs quantum dot solar cells[J]. Semiconductor Science p\r, Theory[J]. Japanese Journal of Applied Physics, 2003, 42(Part 1, No. 1):144-149.[5]Ryczko K ,Se?K G ,Misiewicz J . Eight-band k[middle dot]p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared[J]. Journal of Applied Physics, 2013, 114(22):223519.[6]Xu W ,Li L L ,Dong H M , et al. Band hybridization and spin-splitting in InAs/AISb/GaSb type II and broken-gap quantum wells[J]. Journal of Applied Physics, 2010, 108(5):809.[7]Tanabe K ,Guimard D ,Bordel D , et al. High-efficiency InAs/GaAs quantum dot solar cells by metalorganic chemical vapor deposition[J]. Applied Physics Letters, 2012, 100(19):5014-357.
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