1. 毕业设计（论文）的内容和要求
本课题将机械剥离的方法制备单层及多层的MoS2并用紫外臭氧机处理，通过共聚焦荧光拉曼显微镜研究其结构信息及光学特性。
通过器件制备，研究其光电性能，总结该材料光电性能背后的物理机制。
最后把整个研究内容写成毕业论文。
2. 参考文献
根据毕业要求指点10.3，毕设期间要进行研究现状调查与总结，要求在开题报告及毕业设计（论文）中涉及的英文文献不少于20篇，其中近5年不少于8篇，英文文献不少于5篇。
以下是与本课题相关的部分文献列表：[1] ZHENG X, WEI Y, LIU J, et al. A homogeneous p-n junction diode by selective doping of few layer MoSe2 using ultraviolet ozone for high-performance photovoltaic devices [J]. Nanoscale, 2019, 11(28): 13469-76.[2] YANG A, BLANCON J C, JIANG W, et al. Giant Enhancement of Photoluminescence Emission in WS2-Two-Dimensional Perovskite Heterostructures [J]. Nano Lett, 2019, 19(8): 4852-60.[3] SUN Y, ZHOU Z, HUANG Z, et al. Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals [J]. Adv Mater, 2019, 31(17): e1806562.[4] KOTSAKIDIS J C, ZHANG Q, VAZQUEZ DE PARGA A L, et al. Oxidation of Monolayer WS2 in Ambient Is a Photoinduced Process [J]. Nano Lett, 2019, 19(8): 5205-15.[5] ZHENG X, HUANG H. Controlled Layer-by-Layer Oxidation of MoTe2 via O3 Exposure [J]. ACS Appl Mater Interfaces, 2018, [6] YANG H I, PARK S, CHOI W. Modification of the optoelectronic properties of two-dimensional MoS2 crystals by ultraviolet-ozone treatment [J]. Applied Surface Science, 2018, 443(91-6.[7] LI L, PI L, LI H, et al. Photodetectors based on two-dimensional semiconductors: Progress, opportunity and challenge [J]. Chinese Science Bulletin, 2017, 62(27): 3134-53.[8] PARK S, KIM S Y, CHOI Y, et al. Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals [J]. ACS Appl Mater Interfaces, 2016, 8(18): 11189-93.[9] MAK K F, SHAN J. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides [J]. Nature Photonics, 2016, 10(4): 216-26.[10] DESAI S B, JAVEY A. Gold-Mediated Exfoliation of Ultralarge Optoelectronically-Perfect Monolayers [J]. Adv Mater, 2016, [11] SU W, KUMAR N, SPENCER S J, et al. Transforming bilayer MoS2 into single-layer with strong photoluminescence using UV-ozone oxidation [J]. Nano Research, 2015, 8(12): 3878-86.[12] SHEN C, ZHANG J, SHI D, et al. Photoluminescence Enhancement in Monolayer Molybdenum Disulfide by Annealing in Air [J]. Acta Chimica Sinica, 2015, 73(9): [13] BUSCEMA M, STEELE G A, VAN DER ZANT H S J, et al. The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2 [J]. Nano Research, 2015, 7(4): 561-71.[14] ALLAIN A, KANG J, BANERJEE K, et al. Electrical contacts to two-dimensional semiconductors [J]. Nat Mater, 2015, 14(12): 1195-205.[15] NAN H Y, WANG Z L, WANG W H, et al. Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding [J]. Acs Nano, 2014, 8(6): 5738-45.[16] AZCATL A, MCDONNELL S, K. C S, et al. MoS2 functionalization for ultra-thin atomic layer deposited dielectrics [J]. Applied Physics Letters, 2014, 104(11): [17] MOURI S, MIYAUCHI Y, MATSUDA K. Tunable photoluminescence of monolayer MoS(2) via chemical doping [J]. Nano Lett, 2013, 13(12): 5944-8.[18] MAK K F, HE K, LEE C, et al. Tightly bound trions in monolayer MoS2 [J]. Nat Mater, 2013, 12(3): 207-11.[19] HUANG X, ZENG Z, ZHANG H. Metal dichalcogenide nanosheets: preparation, properties and applications [J]. Chem Soc Rev, 2013, 42(5): 1934-46.[20] WANG Q H, KALANTAR-ZADEH K, KIS A, et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides [J]. Nat Nanotechnol, 2012, 7(11): 699-712.[21] SPLENDIANI A, SUN L, ZHANG Y, et al. Emerging Photoluminescence in Monolayer MoS2 [J]. Nano Letters, 2010, 10(4): 1271-5.[22] MAK K F, LEE C, HONE J, et al. Atomically thin MoS(2): a new direct-gap semiconductor [J]. Phys Rev Lett, 2010, 105(13): 136805.
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