1. 毕业设计（论文）的内容和要求
本课题将机械剥离的方法制备单层及多层的二维过渡金属硫化物，利用共聚焦荧光拉曼显微镜研究其结构信息及光学特性。
通过器件制备，研究其光电性能，总结该材料光电性能背后的物理机制。
最后把整个研究内容写成毕业论文。
2. 参考文献
根据毕业要求指点10.3，毕设期间要进行研究现状调查与总结，要求在开题报告及毕业设计（论文）中涉及的英文文献不少于20篇，其中近5年不少于8篇，英文文献不少于5篇。
以下是与本课题相关的部分文献列表：1.Joensen P, Frindt R, Morrison SR. Single-layer MoS2. Materials research bulletin, 21, 457-461 (1986).2.Splendiani A, Sun L, Zhang Y, Li T, Kim J, Chim C-Y, et al. Emerging photoluminescence in monolayer MoS2. Nano letters, 10, 1271-1275 (2010).3.Lee C, Yan H, Brus LE, Heinz TF, Hone J, Ryu S. Anomalous lattice vibrations of single-and few-layer MoS2. ACS nano, 4, 2695-2700 (2010).4.Lee YH, Zhang XQ, Zhang W, Chang MT, Lin CT, Chang KD, et al. Synthesis of large‐area MoS2 atomic layers with chemical vapor deposition. Advanced materials, 24, 2320-2325 (2012).5.Yin Z, Li H, Li H, Jiang L, Shi Y, Sun Y, et al. Single-layer MoS2 phototransistors. ACS nano, 6, 74-80 (2011).6.Gant P, Huang P, de Lara DP, Guo D, Frisenda R, Castellanos-Gomez A. A strain tunable single-layer MoS2 photodetector. Materials Today,(2019).7.Zhou X, Zhou N, Li C, Song H, Zhang Q, Hu X, et al. Vertical heterostructures based on SnSe2/MoS2 for high performance photodetectors. 2D Materials, 4, 025048 (2017).8.Ye L, Li H, Chen Z, Xu J. Near-infrared photodetector based on MoS2/black phosphorus heterojunction. Acs Photonics, 3, 692-699 (2016).9.Zhang K, Zhang T, Cheng G, Li T, Wang S, Wei W, et al. Interlayer transition and infrared photodetection in atomically thin type-II MoTe2/MoS2 van der Waals heterostructures. ACS nano, 10, 3852-3858 (2016).10.Yang S, Wang C, Ataca C, Li Y, Chen H, Cai H, et al. Self-driven photodetector and ambipolar transistor in atomically thin GaTe-MoS2 pn vdW heterostructure. ACS applied materials WTe 2 under tensile strain: A first-principles prediction. Physical Review B, 99, 235401 (2019).16.Xia J, Li DF, Zhou JD, Yu P, Lin JH, Kuo JL, et al. Pressure‐Induced Phase Transition in Weyl Semimetallic WTe2. Small, 13, 1701887 (2017).17.Wang Q, Zheng J, He Y, Cao J, Liu X, Wang M, et al. Robust edge photocurrent response on layered type II Weyl semimetal WTe 2. Nature communications, 10, 1-7 (2019).18.Shi Y, Kahn J, Niu B, Fei Z, Sun B, Cai X, et al. Imaging quantum spin Hall edges in monolayer WTe2. Science advances, 5, eaat8799 (2019).19.Seifert P, Sigger F, Kiemle J, Watanabe K, Taniguchi T, Kastl C, et al. In-plane anisotropy of the photon-helicity induced linear Hall effect in few-layer WTe 2. Physical Review B, 99, 161403 (2019).20.Das P, Di Sante D, Cilento F, Bigi C, Kopic D, Soranzio D, et al. Electronic properties of candidate type-II Weyl semimetal WTe2. A review perspective. Electronic Structure, 1, 014003 (2019).
以上是毕业论文任务书，课题毕业论文、开题报告、外文翻译、程序设计、图纸设计等资料可联系客服协助查找。
