1. 毕业设计（论文）的内容和要求
本课题将通过机械剥离方法制备二维半导体InSe，通过对剥离过程不同条件的摸索，如剥离次数，剥离时加热温度等，得到大面积，少层数的二维半导体InSe，最好是得到若干单层二维半导体InSe。
通过一些表征手段，如光学照片、拉曼等，学会判断得到的二维半导体InSe的层数，尤其是通过拉曼手段，通过不同的峰位位置，以及不同的峰的半高宽等信息，了解二维半导体InSe的层数及质量。
最后把整个研究内容写成毕业论文。
2. 参考文献
1. Mudd G W, Svatek S A, Ren T, et al. Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement[J]. Advanced Materials, 2013, 25(40): 5714-5718.2. Bandurin D A, Tyurnina A V, Geliang L Y, et al. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe[J]. Nature nanotechnology, 2017, 12(3): 223.3. Tamalampudi S R, Lu Y Y, Kumar U R, et al. High performance and bendable few-layered InSe photodetectors with broad spectral response[J]. Nano letters, 2014, 14(5): 2800-2806.4. Lei S, Wen F, Ge L, et al. An atomically layered InSe avalanche photodetector[J]. Nano letters, 2015, 15(5): 3048-3055.5. Chevy A, Kuhn A, Martin M S. Large InSe monocrystals grown from a non-stoichiometric melt[J]. Journal of Crystal Growth, 1977, 38(1): 118-122.6. Lei S, Ge L, Najmaei S, et al. Evolution of the electronic band structure and efficient photo-detection in atomic layers of InSe[J]. ACS nano, 2014, 8(2): 1263-1272.7. Sucharitakul S, Goble N J, Kumar U R, et al. Intrinsic electron mobility exceeding 103 cm2/(V s) in multilayer InSe FETs[J]. Nano letters, 2015, 15(6): 3815-3819.8. Balitskii O A, Savchyn V P, Yukhymchuk V O. Raman investigation of InSe and GaSe single-crystals oxidation[J]. Semiconductor science and technology, 2002, 17(2): L1.9. da Costa P G, Dandrea R G, Wallis R F, et al. First-principles study of the electronic structure of γ-InSe and β-InSe[J]. Physical Review B, 1993, 48(19): 14135.10. Kuroda N, Nishina Y. Resonance Raman scattering study on exciton and polaron anisotropies in InSe[J]. Solid State Communications, 1980, 34(6): 481-484.11. Wang J J, Cao F F, Jiang L, et al. High performance photodetectors of individual InSe single crystalline nanowire[J]. Journal of the American Chemical Society, 2009, 131(43): 15602-15603.12. De Blasi C, Micocci G, Mongelli S, et al. Large InSe single crystals grown from stoichiometric and non-stoichiometric melts[J]. Journal of Crystal Growth, 1982, 57(3): 482-486.13. Lauth J, Gorris F E S, Samadi Khoshkhoo M, et al. Solution-processed two-dimensional ultrathin InSe nanosheets[J]. Chemistry of Materials, 2016, 28(6): 1728-1736.14. Chen Z, Biscaras J, Shukla A. A high performance graphene/few-layer InSe photo-detector[J]. Nanoscale, 2015, 7(14): 5981-5986.15. Kress-Rogers E, Nicholas R J, Portal J C, et al. Cyclotron resonance studies on bulk and two-dimensional conduction electrons in InSe[J]. Solid State Communications, 1982, 44(3): 379-383.16. Martnez‐Pastor J, Segura A, Valdes J L, et al. Electrical and photovoltaic properties of indium‐tin‐oxide/p‐InSe/Au solar cells[J]. Journal of applied physics, 1987, 62(4): 1477-1483.17. Atakishiev S M, Akhundov G A. On the Transfer Nature of Charge Carriers in InSe[J]. physica status solidi (b), 1969, 32(1): K33-K36.18. Feng W, Zheng W, Cao W, et al. Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface[J]. Advanced materials, 2014, 26(38): 6587-6593.19. Luo W, Cao Y, Hu P, et al. Gate Tuning of High‐Performance InSe‐Based Photodetectors Using Graphene Electrodes[J]. Advanced Optical Materials, 2015, 3(10): 1418-1423.20. Feng W, Wu J B, Li X, et al. Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response[J]. Journal of Materials Chemistry C, 2015, 3(27): 7022-7028.
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