倒格矢对亚波长小孔阵列异常透射的影响任务书

 2022-01-29 19:15:08

全文总字数:7523字

1. 毕业设计(论文)的内容和要求

本课题主要利用CST MicroStudio软件理论研究倒格矢对亚波长小孔阵列异常透射的影响,主要研究内容包括:1.红外波段,亚波长圆孔阵列在不同入射偏振光下的透射效率: Txx和Tyy;2.结构参数对亚波长圆孔阵列的透射系数Txx和Tyy的影响;3.倒格矢对亚波长圆孔阵列的透射系数Txx和Tyy的影响;4. 亚波长圆孔阵列的透射峰和透射谷的影响因素;5.亚波长圆形孔阵列的电场,磁场,电流分布图;

2. 实验内容和要求

本课题是理论研究,主要利用CST MicroStudio软件进行仿真模拟。

3. 参考文献

1. L. Liu, S. B. Kumar, Y. Ouyang, and J. Guo, Performance limits of monolayer transition metal dichalcogenidetransistors, IEEE Trans. Electron. Dev. 58(9), 30423047 (2011).2. Y. Yoon, K. Ganapathi, and S. Salahuddin, How good can monolayer MoS transistors be? Nano Lett. 11(9),37683773 (2011).3. H. Wang, L. Yu, Y. H. Lee, Y. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, Integratedcircuits based on bilayer MoS transistors, Nano Lett. 12(9), 46744680 (2012).4. B. Radisavljevic, M. B. Whitwick, and A. Kis, Integrated circuits and logic operations based on single-layerMoS2., ACS Nano 5(12), 99349938 (2011).5. S. Bertolazzi, J. Brivio, and A. Kis, Stretching and breaking of ultrathin MoS2., ACS Nano 5(12), 97039709(2011).6. Q. He, Z. Zeng, Z. Yin, H. Li, S. Wu, X. Huang, and H. Zhang, Fabrication of flexible MoS2 thin-film transistorarrays for practical gas-sensing applications, Small 8(19), 29942999 (2012).7. J. Pu, Y. Yomogida, K. K. Liu, L. J. Li, Y. Iwasa, and T. Takenobu, Highly flexible MoS2 thin-film transistorswith ion gel dielectrics, Nano Lett. 12(8), 40134017 (2012).8. Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, Single-layer MoS2phototransistors, ACS Nano 6(1), 7480 (2012).9. H. S. Lee, S. W. Min, Y. G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, MoSnanosheet phototransistors with thickness-modulated optical energy gap, Nano Lett. 12(7), 36953700 (2012).10. M. Shanmugam, T. Bansal, C. A. Durcan, and B. Yu, Molybdenum disulphide/titanium dioxide nanocompositepoly3-hexylthiophene bulk heterojunction solar cell, Appl. Phys. Lett. 100(15), 153901 (2012).11. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A.Firsov, Electric field effect in atomically thin carbon films, Science 306(5696), 666669 (2004).12. K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, Twodimensionalatomic crystals, Proc. Natl. Acad. Sci. U.S.A. 102(30), 1045110453 (2005).13. K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, Atomically thin MoS: A new direct-gap semiconductor,Phys. Rev. Lett. 105(13), 136805 (2010).14. A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C. Y. Chim, G. Galli, and F. Wang, Emergingphotoluminescence in monolayer MoS, Nano Lett. 10(4), 12711275 (2010).15. K. F. Mak, K. He, J. Shan, and T. F. Heinz, Control of valley polarization in monolayer MoS2 by opticalhelicity, Nat. Nanotechnol. 7(8), 494498 (2012).16. H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, Valley polarization in MoS2 monolayers by optical pumping,Nat. Nanotechnol. 7(8), 490493 (2012).17. T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, Valley-selectivecircular dichroism of monolayer molybdenum disulphide, Nat. Commun. 3(2), 887 (2012).18. S. Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Matthews, J. Li, J. C. Grossman, and J. Wu, Thermally drivencrossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2., Nano Lett. 12(11),55765580 (2012).19. R. Ganatra and Q. Zhang, Few-layer MoS2: a promising layered semiconductor, ACS Nano 8(5), 40744099(2014).20. H. Zhu, Y. Wang, J. Xiao, M. Liu, S. Xiong, Z. J. Wong, Z. Ye, Y. Ye, X. Yin, and X. Zhang, Observation ofpiezoelectricity in free-standing monolayer MoS, Nat. Nanotechnol. 10(2), 151155 (2014).21. Y. Lin, X. Ling, L. Yu, S. Huang, A. L. Hsu, Y.-H. Lee, J. Kong, M. S. Dresselhaus, and T. Palacios, Dielectricscreening of excitons and trions in single-layer MoS2., Nano Lett. 14(10), 55695576 (2014).22. R. W. Boyd, Nonlinear Optics, 3rd ed. (Academic, 2008).23. N. Kumar, S. Najmaei, Q. Cui, F. Ceballos, P. M. Ajayan, J. Lou, and H. Zhao, Second harmonic microscopy ofmonolayer MoS2, Phys. Rev. B 87(16), 161403 (2013).24. L. M. Malard, T. V. Alencar, A. P. M. Barboza, K. F. Mak, and A. M. de Paula, Observation of intense secondharmonic generation from MoS2 atomic crystals, Phys. Rev. B 87(20), 201401 (2013).25. Y. Li, Y. Rao, K. F. Mak, Y. You, S. Wang, C. R. Dean, and T. F. Heinz, Probing symmetry properties of fewlayerMoS2 and h-BN by optical second-harmonic generation, Nano Lett. 13(7), 33293333 (2013).26. D. J. Clark, C. T. Le, V. Senthilkumar, F. Ullah, H.-Y. Cho, Y. Sim, M.-J. Seong, K.-H. Chung, Y. S. Kim, andJ. I. Jang, Near bandgap second-order nonlinear optical characteristics of MoS2 monolayer transferred ontransparent substrates, Appl. Phys. Lett. 107(13), 131113 (2015).27. H. Zeng, G.-B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, Opticalsignature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides, Sci.Rep. 3(7444), 1608 (2013).28. M. Grning and C. Attaccalite, Second harmonic generation in h-BN and MoS2 monolayers: role of electronholeinteraction, Phys. Rev. B 89(8), 081102 (2014).29. M. M. Ugeda, A. J. Bradley, S.-F. Shi, F. H. da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S. K. Mo, Z. Hussain, Z.X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, Giant bandgap renormalization and excitonic effects in amonolayer transition metal dichalcogenide semiconductor, Nat. Mater. 13(12), 10911095 (2014).30. G. Gao, W. Gao, E. Cannuccia, J. Taha-Tijerina, L. Balicas, A. Mathkar, T. N. Narayanan, Z. Liu, B. K. Gupta,J. Peng, Y. Yin, A. Rubio, and P. M. Ajayan, Artificially stacked atomic layers: toward new van der Waalssolids, Nano Lett. 12(7), 35183525 (2012).31. J. Bardeen, Electron correlation and screening effects in related to surface physics, Surf. Sci. 2(6), 381388(1964).32. K. S. Yee, Numerical solution of boundary value problems involving Maxwells equations in isotropic media,IEEE Trans. Antenn. Propag. 14(3), 302307 (1966).33. C. C. Shen, Y. T. Hsu, L. J. Li, and H. L. Liu, Charge dynamics and electronic structures of monolayer MoS2films grown by chemical vapor deposition, Appl. Phys. Express 6(12), 125801 (2013).34. R. A. Neville and B. L. Evans, The band edge excitons in 2H-MoS2, Phys. Status Solidi 73(2), 597606(1976).35. C. Hubert, L. Billot, P. M. Adam, R. Bachelot, P. Royer, J. Grand, D. Gindre, K. D. Dorkenoo, and A. Ford,Role of surface plasmon in second harmonic generation from gold nanorods, Appl. Phys. Lett. 90(18), 181105(2007).36. M. A. Kats, R. Blanchard, P. Genevet, and F. Capasso, Nanometre optical coatings based on strong interferenceeffects in highly absorbing media, Nat. Mater. 12(1), 2024 (2012).37. M. A. Kats, S. J. Byrnes, R. Blanchard, M. Kolle, P. Genevet, J. Aizenberg, and F. Capasso, Enhancement ofabsorption and color contrast in ultra-thin highly absorbing optical coatings, Appl. Phys. Lett. 103(10), 101104(2013).38. M. A. Kats, R. Blanchard, S. Ramanathan, and F. Capasso, Thin-film interference in lossy, ultra-thin layers,Opt. Photonics News 25(1), 4047 (2014).39. J. Zeng, M. Yuan, W. Yuan, Q. Dai, H. Fan, S. Lan, and S. Tie, Enhanced second harmonic generation of MoS2layers on a thin gold film, Nanoscale 7(32), 1354713553 (2015).

4. 毕业设计(论文)计划

(1)2月5日前,完成开题报告;(2)2月20日前,完成外文翻译;(3)3月10前,完成CST软件的操作的学习;(4)4月15日前,完成数值模拟工作;(5)4月30日前,完成实验工作;(6)5月10日前,完成数据的绘图工作;(7)6月1日前,完成毕业论文的写作工作;

剩余内容已隐藏,您需要先支付 10元 才能查看该篇文章全部内容!立即支付

以上是毕业论文任务书,课题毕业论文、开题报告、外文翻译、程序设计、图纸设计等资料可联系客服协助查找。